Infineon Technologies AG has extended its portfolio of isolated EiceDRIVER Enhanced gate drivers with the F3 Enhanced (1ED332x) family with short-circuit protection. These devices provide protection ...
Comments Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations: “Silicon carbide MOSFET technology opens the door for smaller, lighter automotive ...
Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...
Littelfuse launched IX4352NE, a Low-side SiC MOSFET and IGBT Gate Driver IC specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off, causing malfunctions such as short ...
Power Integrations is sampling a family of plug-and-play gate drivers for 62 mm SiC MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable ...
When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...
They provide up to 8A and suit SiC transistors handling 600-800A with standard gate-emitter voltages from +15V, with various negative voltages from -3V to -15V. Safety features include: drain to ...
This driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications. The key differentiator of the IX4352NE ...
KAWASAKI, Japan, March 06, 2025--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with an output of +6.8A/-4.8A, in a ...
When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...
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