Qorvo’s QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 ...
The MAPC-A4003-AB is a 700 W GaN-on-SiC Power Amplifier (PA). Leveraging MACOM’s GaN-on-SiC process technology, the 50-ohm PA is designed to be a compact 700 W solution for 5.2 – 5.9 GHz radar ...
Cree, has introduced a 25W GaN MMIC for 6–12GHz performance for replacing traveling wave tube amplifiers (TWTAs) in applications including radar and jamming, test equipment, and broadband amplifiers.
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Dig into the details of just how reliable are some GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies are for S-Band and X-Band. August 14th, 2019 - By: Wolfspeed, a ...
San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input-matched ...
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