Silicon MOSFET power transistors have been a mainstay of power-supply design for years. And while they’re still widely used, gallium-nitride (GaN) transistors are gradually replacing MOSFETs in some ...
I have been waiting for “the other shoe to drop” regarding GaN power element evolution and so here it is. I had fully expected Texas Instruments to join the race for an integrated power element and ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Navitas Semiconductor today announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V platform.
GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
Just like life’s reality, when the aged leaves the center stage for the younger ones, Silicon is taking the bow. The advent and adoption of Gallium Nitride (GaN) have succeeded in gradually easing out ...
A solution is presented in the form of a specialised GaN driver that provides the necessary functions for a robust and reliable design. Additionally, the article suggests the use of LTspice as a ...
Renesas Electronics announced the space industry’s first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride FET driver for DC/DC power supplies in small satellites (smallsats) and ...
Power electronics are booming, fueled by demand ranging from induction chargers for wearable and portable electronics, to charging stations for electric vehicles. An estimated 80% of all U.S.
Imec has demonstrated a functional GaN half-bridge monolithically integrated with drivers. Mounted on a buck-convertor test board, the chip converts an input voltage of 48V to an output of 1V, with a ...
EL SEGUNDO, CA, CA, UNITED STATES, April 3, 2024 /EINPresswire.com/ -- EPC Space announces the launch of EPC7009L16SH, a Radiation Hardened Gallium Nitride gate ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
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