Substrates optimized for fabricating field-effect transistors (FETs), including Si, GaAs, diamond, graphene, with excellent properties, purity and uniformity. SOUTH ...
Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Interesting Engineering on MSN
The uncomfortable truth behind the hype around 2D semiconductor performance
For almost two decades, scientists have been trying to move beyond silicon, the material ...
Interesting Engineering on MSN
China claims to develop world’s smallest and most energy-efficient transistor
Researchers at Peking University in China have developed the world’s smallest and most energy-efficient ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary researchers from the ...
A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...
This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...
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